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STC05IE150HP
Emitter Switched Bipolar Transistor ESBT 1500 V - 5 A - 0.12
Features
VCS(ON) 0.6 V
IC 5A
RCS(ON)
High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch, up to 150 kHZ Squared rbsoa, up to 1500 V Very low C ISS driven by RG = 47 Very low turn-off cross over time

In compliance with the 2002/93/EC European Directive
Applications

Aux SMPS for three phase mains Sepic PFC
Description
The STC05IE150HP is manufactured in Monolithic ESBT Technology, aimed to provide best performance in high frequency / high voltage applications. it is designed for use in Gate Driven based topologies.
Order Codes
Part Number STC05IE150HP Marking C05IE150HP Package TO247-4LHP Packaging TUBE
November 2006
This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice.
W
0.12
Internal Schematic Diagram
Rev 2
(R)
PRELIMINARY DATA
TO247-4LHP
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1 Absolute Maximum Ratings
STC05IE150HP
1
Table 1.
Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ
Absolute Maximum Ratings
Absolute Maximum Ratingsn
Parameter Collector-source voltage (VBS = VGS = 0 V) Base-source voltage (IC = 0, VGS = 0 V) source-base voltage (ic = 0, vgs = 0 v) Gate-source Voltage Collector Current Collector peak current (tP < 5ms) Base current Base peak current (tP < 1ms) Total dissipation at Tc = 25C Storage temperature Max. operating junction temperature Value 1500 30 29 Unit V V V V A A A A W C C
17
5 15 4 8 208 -40 to 150 150
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Table 2.
Symbol Rthj-case
Thermal Data
Thermal Data
Parameter Thermal resistance junction-case____________________Max Value 0.6 Unit C/W
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STC05IE150HP
2 Electrical Characteristics
2
Table 3.
Symbol ICS(SS) IBS(OS) ISB(OS) IGS(OS)
Electrical Characteristics
Electrical Characteristics (TCASE = 25C; unless otherwise specified)
Parameter Collector-source current (V BS = VGS = 0) Base-source current (IC = 0, VGS = 0 V) Source-base current (IC = 0, VGS = 0) Gate-source leakage Test Conditions VCE = 1500V VBS(OS) = 30 V VSB(OS) = 20 V VGS = 17 V VGS = 10 V_ IC = 5 A _ IB = 1.0 A VGS = 10 V_ IC = 2 A _ IB = 0.2 A VGS = 10 V_ VCS = 1 V_ IC = 5 A VGS = 10 V _VCS = 1 V _IC = 2 A VGS = 10 V_IC = 5 A_ IB = 1 A VGS = 10 V_IC = 2 A_ IB = 0.2 A VBS = V GS ______IB = 250 A TBD TBD TBD TBD TBD ns ns 2 4 8 0.6 0.8 6 11 1.3 1.0 3 TBD TBD 1.5 1.2 4 V V V pF nC Min. Typ. Max. 100 10 100 100 1.2 1.5 Unit
A A A
nA V V
VCS(ON) Collector-source ON voltage hFE DC current gain
VBS(ON) Base-source ON voltage VGS(th) CISS Gate threshold voltage Input capacitance
Q GS(tot) Gate-source charge INDUCTIVE LOAD Storage time Fall time
ts tf
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3 Package mechanical data
STC05IE150HP
3
Package mechanical data
In order to meet environmental requirements, ST offers these devices in ECOPACK(R) packages. These packages have a Lead-free second level interconnect . The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label. ECOPACK is an ST trademark. ECOPACK specifications are available at: www.st.com
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STC05IE150HP
3 Package mechanical data
TO247-4LHP MECHANICAL DATA
DIM. A A1 A2 A3 b b1 b2 c D D1 E e e1 L L1 L2 L3 oP S
MIN. 5.50 2.85
0.95 1.10 2.50 0.40 23.85 15.45 2.54 10.20 2.20
mm. TYP 5.65 3.15 1.92 3.18 1.10
MAX. 5.80 3.25
24 21.50 15.60 5.08 2.50 18.50 3 5.50
1.30 1.50 2.90 0.80 24.15 15.75
10.80 2.80
3.55
3.65
7908765A
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4 Revision History
STC05IE150HP
4
Revision History
Date 10-Mar-2006 29-Nov-2006
Revision 1 2 Initial release.
Changes
The document has been reformatted
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STC05IE150HP
4 Revision History
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